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AM2729-110 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS .REFRACTORY/ .EMI .3: .LOW .I .OVERLAY .METAL/ .P DESCRIPTION G OLD METALLIZATION T TER SITE BALLASTED 1 VSWR CAPABILITY THERMAL RESISTANCE N PUT/OUTPUT MATCHING GEOMETRY C ERAMIC HERMETIC PACKAGE OUT = 105 W MIN. WITH 6.5 dB GAIN .400 x .500 2L SFL (S138) hermetically sealed ORDER CODE AM2729-110 BRANDING 2729-110 PIN CONNECTION The AM2729-110 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR. Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics). The AM2729-110 is supplied in the BIGPACTM Hermetic M etal/Ceramic package with i nternal Input/Output matching circuitry, and is intended for military and other high reliability applications. ABSOLUTE MAXIMUM RATINGS (T case = 25 C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC 100C) 438 12 48 250 - 65 to +200 W A V C C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.4 C/W *Applies only to rated RF amplifier operation August 1992 1/4 AM2729-110 ELECTRICAL SPECIFICATIONS (Tcase = 25 C) STATIC Valu e Symbol Test Conditions Min. Typ. Max. Unit BVCBO BVEBO BVCER ICES hFE DYNAMIC IC = 40mA IE = 8mA IC = 40mA VBE = 0V VCE = 5V IE = 0mA IC = 0mA RBE = 10 VCE = 40V IC = 4A 55 3.5 55 -- 30 -- -- -- -- -- -- -- -- 30 -- V V V mA -- Value Symbol Test Conditions Min. Typ. Max. Unit POUT c GP Note: f = 2700 -- 2900MHz PIN = 23.5W f = 2700 -- 2900MHz PIN = 23.5W f = 2700 -- 2900MHz PIN = 23.5W = = 50 VCC = 40V VCC = 40V VCC = 40V 105 33 6.5 115 40 6.9 -- -- -- W % dB Pul se Widt h Duty Cycle Sec 10% TYPICAL PERFORMANCE TYPICAL BROADBAND PERFORMANCE PIN (W) 28 24 20 VCC - 40 Volts PW - 50 sec DC - 10% TC - 25C PIN (W) 20 24 28 2/4 AM2729-110 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN TYPICAL COLLECTOR LOAD IMPEDANCE ZCL H L ZCL H ZIN FREQ. L = 2.7 GHz M = 2.8 GHz H = 2.9 GHz ZIN () 8.0 - j 18.5 15.0 - j 21.0 17.3 - j 12.0 ZCL () 4.0 - j 9.0 4.5 - j 9.5 5.0 - j 8.0 L PIN = 23.5 W VCC = 40 V Normalized to 50 ohms TEST CIRCUIT All dimensions are in inches. Substrate material: .025 thick AI2O3 C1 C2 C3 C4 : : : : 1500 pF RF Feedthrough 1 F CK06 Capacitor 1 F Tantalum Capacitor 100 F Electrolytic Capacitor, 63V C5 : 22 pF Chip Capacitor RFC1 : No. 26 Wire, 2 Turn .08 I.D. RFC2 : No. 26 Wire, 2 Turn .08 I.D. 3/4 AM2729-110 PACKAGE MECHANICAL DATA Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4 |
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